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We study piezoelectric field effects in the ultimate atomic limit. The insertion of piezoelectrically active (211)-InAs lattice planes in GaAs gives rise to optical phenomena not observed in analogous (100) structures. The InAs-related luminescence exhibits a pronounced blue shift with increasing excitation density. The nonlinear dependence of the corresponding luminescence efficiency is a manifestation of the internal piezoelectric field in the strained InAs sheets.
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Ilg et al. (1992) studied this question.
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