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Low energy oxygen implantation during Si molecular beam epitaxy (MBE) allows the formation of highly-oriented Si nanocrystal dots (NCDs) suspended in SiO2. Transmission electron microscopy reveals the unusual facet morphology of NCD while the spontaneous orientation of the crystal axis of NCD toward [100] is clearly observed. Well-developed {100} and {111} facets are characterized by nearly perfect Si/SiO2 interfaces. Compelling evidence is found for the epitaxial origin of NCD inherited from the parental two-dimensional Si slabs.
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Ishikawa et al. (1997) studied this question.
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