A new technique for the preparation of light emitting nanocrystalline (nc) silicon by a combination of plasma chemical vapor deposition and post-treatment consisting of oxidation and annealing in forming gas is reported. The advantage of this processing consists in the possibility of a control of the crystallite size and the fraction of nc-Si in the film. A strong increase of the photoluminescence below 35 Å, as predicted by theory, is documented experimentally.
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Rückschloß et al. (1993) studied this question.
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