On the scattering of conduction electrons by magnetic impurities in semiconductors of InSb‐Type and HgTe‐Type band structure

The relaxation time and the mobility are calculated for the case of the conduction electrons scattered by impurities possessing localized magnetic moments. The Kane model is used to describe the energy bands. The perturbing potential is assumed to be of a short range. The numerical estimations are made for two special forms of perturbation: delta‐like and square‐well form. The estimations show that the contribution of the considered mechanism to the mobility is small compared to that of other scattering mechanisms. However, there exist transport phenomena which seem to be strongly influenced by magnetic impurity scattering.