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High-frequency, 106≲f≲2×109 Hz, impedance measurements on ZnO-based ceramic varistors are described. Our studies indicate that the ZnO grain resistivity ρg is less than 1 Ω cm for GE-MOVR varistors at room temperature. The high-frequency measurements are compared with estimates of ρg from high-current (J≳103 A/cm2) data and the difference observed is explained in terms of the varistor ceramic microstructure.
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Levinson et al. (1976) studied this question.
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