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May 15, 2002Japanese Journal of Applied PhysicsOpen Access

Characteristics of Semiconductor Alloy GaAs1-xBix

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KOKunishige OeKyoto Institute of Technology

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Kunishige Oe (2002) studied this question.

synapsesocial.com/papers/6a8d728923c3143ce3dcd57fhttps://doi.org/10.1143/jjap.41.2801
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth1996 · 68 citations
  2. 2Organometallic vapor-phase epitaxy growth and characterization of Bi-containing III/V alloys1990 · 68 citations
  3. 3New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy1998 · 217 citations
  4. 4Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy2000 · 27 citations
  5. 5Raman studies on GaAs1−xBix and InAs1−xBix2001 · 60 citations