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April 1, 2007Japanese Journal of Applied Physics

HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications

S. Maikap Pei-Jer Tzeng Ting‐Yu Wang Heng-Yuan Lee Cha-Hsin Lin Ching‐Chiun Wang Lurng-Shehng Lee Jer‐Ren Yang Ming‐Jinn Tsai

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Abstract

HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications, Maikap, Siddheswar, Tzeng, Pei-Jer, Wang, Ting-Yu, Lee, Heng-Yuan, Lin, Cha-Hsin, Wang, Ching-Chiun, Lee, Lurng-Shehng, Yang, Jer-Ren, Tsai, Ming-Jinn

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Cite This Study

Maikap et al. (2007) studied this question.

synapsesocial.com/papers/6a8d7febe4447a32cadcd466 https://doi.org/10.1143/jjap.46.1803

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