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June 30, 2004IEEE Transactions on Electron Devices

Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer

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YTY.-N. TanNational University of SingaporeWCW. K. ChimNational University of SingaporeBCByung Jin ChoKorea Advanced Institute of Science and Technology

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Tan et al. (2004) studied this question.

synapsesocial.com/papers/6ab5c871a698145f830e3d54https://doi.org/10.1109/ted.2004.829861
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