Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 1, 2002IEEE Electron Device Letters

Effect of Al inclusion in HfO 2 on the physical and electrical properties of the dielectrics

View Full Paper
Ask AI
Bookmark
Share

Authors

WZWeihang ZhuUniversity of HoustonTTT. TamagawaTohoku UniversityMGM. GibsonIBM (United States)

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Zhu et al. (2002) studied this question.

synapsesocial.com/papers/6a917fb79732cc92acd2d893https://doi.org/10.1109/led.2002.805000
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Making silicon nitride film a viable gate dielectric1998 · 384 citations
  2. 2Optical properties of crystalline semiconductors and dielectrics1988 · 452 citations
  3. 3Hafnium and zirconium silicates for advanced gate dielectrics2000 · 975 citations
  4. 4Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films2001 · 266 citations