The electronic Raman scattering efficiency for interband transitions between valenceband states of p-type silicon is calculated taking into account the detailed band structure. In contrast to the isotropic model, the real spectrum reflects the band anisotropy: the spectrum extends from zero to rather large scattering frequency with a long tail; there appears a peak at about 500-600 cm^-1. The result is compared with the experiment of Jouanne and is found to be in fair agreement.
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Kanehisa et al. (1982) studied this question.
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