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Transient electronic transport properties of the bulk Ga0.47In0.53As and the two-dimensional electron gas (2DEG) at the Ga0.47In0.53 As/Al0.48In0.52As heterointerface for various electric fields are investigated by ensemble Monte Carlo simulations. The average electron velocity during transient transport in the 2DEG at the Ga0.47In0.53As/Al0.48In0.52As interface is about 8 times the steady-state velocity for E=20 kV/cm at room temperature and 30% higher than that in the intrinsic bulk Ga0.47In0.53As because of a higher peak velocity and a shorter transient time. This transient velocity enhancement in conjunction with higher 2DEG densities may significantly improve the performance of submicron-gate and even near-micron-gate Ga0.47In0.53As/Al0.48In0.52As high electron mobility transistors.
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Yoon et al. (1988) studied this question.
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