Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 15, 1981Physical review. B, Condensed matter

Theory of interstitial transition-metal impurities in silicon

View Full Paper
Ask AI
Bookmark
Share

Authors

GDGary G. DeLeoLehigh UniversityGWG. D. WatkinsSimon Fraser UniversityWFW. Beall FowlerLehigh University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

DeLeo et al. (1981) studied this question.

synapsesocial.com/papers/6a8de396b4e2d843785bef64https://doi.org/10.1103/physrevb.23.1851
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in Diamond1973 · 320 citations
  2. 2Electronic states of a substitutional chromium impurity in GaAs1979 · 80 citations
  3. 3Optimization of the Statistical Exchange Parameter<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>α</mml:mi></mml:math>for the Free Atoms H through Nb1972 · 1,173 citations
  4. 4Electronic structure of Cu, Ni, Co, and Fe substitutional impurities in gallium arsenide1980 · 71 citations
  5. 5Localized description of the electronic structure of covalent semiconductors. II. Imperfect crystals1975 · 52 citations