Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing BaTiO3 Insulator Film

Metal-insulator-semiconductor (MIS) structures of heavily doped ( 6–7×1018 cm-3) epitaxial diamond were prepared, which include highly polarizable BaTiO3 insulator films. They were characterized by capacitance-voltage ( C-V) and electron-beam-induced-current (EBIC) measurements. Despite the presence of background boron of an extremely high concentration, an applied voltage of at most 10 V was sufficient to establish the deep-depletion condition at the diamond surface. The observed EBIC image gave a more direct indication of the efficient field effect in our diamond MIS structures.