Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etching

A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350 degrees C. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2*10/sup 13/ cm/sup -3/ and 280 cm/sup 2//V-s, respectively. The maximum transconductance was 87 mu S/mm at 200 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>