Vertical Si-Nanowire n -Type Tunneling FETs With Low Subthreshold Swing ( ≤ 50\ mV/decade ) at Room Temperature

This letter presents a Si nanowire based tunneling field-effect transistor (TFET) using a CMOS-compatible vertical gate-all-around structure. By minimizing the thermal budget with low-temperature dopant-segregated silicidation for the source-side dopant activation, excellent TFET characteristics were obtained. We have demonstrated for the first time the lowest ever reported subthreshold swing (SS) of 30 mV/decade at room temperature. In addition, we reported a very convincing SS of 50 mV/decade for close to three decades of drain current. Moreover, our TFET device exhibits excellent characteristics without ambipolar behavior and with high Ion/Ioffratio (105), as well as low Drain-Induced Barrier Lowering of 70 mV/V.