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January 1, 1969physica status solidi (b)

X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation

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Authors

UBU. BonseTU Dortmund UniversityMHMichael HartScientific Consulting GroupGSG. H. SchwuttkeArizona State University

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Cite This Study

Bonse et al. (1969) studied this question.

synapsesocial.com/papers/6a8e60d2e89c4e0bb511d6d2https://doi.org/10.1002/pssb.19690330134
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1X‐Ray Diffraction by a Crystal Containing a Translation Fault1969 · 52 citations
  2. 2Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation1968 · 34 citations
  3. 3AN X-RAY INTERFEROMETER1965 · 1,056 citations