Experimental study reveals magnetic field sensitivity of optical constants in amorphous silicon alloys, indicating hopping transport influenced by lattice and core spin interactions.
Carrier dynamics in amorphous a-Si 1 − x RE x (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region (ℏω < 1 eV) have been found to be anomalously sensitive to changes of temperature and/or magnetic field. The observed behavior is consistent with the model of hopping transport where the interaction of carriers with both the lattice and large core spin of Gd ions is taken into account.
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Basov et al. (2002) studied this question.
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