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Some changes of the activation energy ϵ1 of the conductivity of Ge which are produced by variations of the compensation ratio K are studied in the region of temperatures where the conductivity is related to electrons released from shallow donors into the conduction band. A substantial increase of ϵ1 is found for shallow donor concentrations of about 1 × 1016 cm−3 and 1 – K → 0. This finding is in good quantitative agreement with the theory of Shklovskii and Efros.
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Shlimak et al. (1971) studied this question.
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