Reversed Size Dependence of External Quantum Efficiency in GaN Micro-LEDs with an AlGaN-Interlayered QW–QD Composite Active Region

Size-dependent efficiency degradation remains a major challenge for deeply scaled GaN-based micro-light-emitting diodes (micro-LEDs) because etched sidewalls increasingly influence carrier recombination. Here, square micro-LEDs with lateral dimensions of 5–50 μm were fabricated from the same plasma-assisted molecular-beam-epitaxy-grown wafer containing a five-period InGaN quantum-well/1 nm Al0.1Ga0.9N interlayer/InGaN quantum-dot-like (QW–QD) composite active region. Contrary to the conventional size effect, the light output power density and external quantum efficiency (EQE) increased as the mesa size decreased. The peak EQEs were 3.66%, 4.53%, 5.63%, 7.04%, and 7.27% for the 50, 40, 30, 10, and 5 μm devices, respectively, corresponding to an approximately 98.6% increase from 50 to 5 μm. The favorable scaling is consistent with localization-mediated suppression of lateral carrier loss combined with size-dependent light extraction. The present measurements do not quantitatively separate injection, internal efficiency, and extraction contributions. These results demonstrate the potential of ultrathin-interlayer QW–QD active-region engineering for scaled GaN micro-LEDs.