We study surface plasmons on n-type semiconductors, for realistic and nonuniform free-carrier density profiles, and through use of a nonlocal description of the response of the electrons. A random-phase-approximation description is employed, with the irreducible particle-hole propagator calculated from wave functions generated by a self-consistent potential. For the case of n-type GaAs, we present quantitative studies of the dispersion of surface plasmons, Landau damping of these modes, and frequency shifts induced by a depletion or accumulation layer. The emphasis is on the range of wave vectors probed in near-specular electron-energy-loss studies.
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Ehlers et al. (1987) studied this question.
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