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An electrooptic modulator based on GaAs is proposed. The configuration as well as the operating principle yield high packing density and insensitivity to the material variation. One configuration has been fabricated and characterized. Its linear modulation characteristic has been measured, and a modulation depth of more than 70% has been obtained with a device length of only 1.5 mm. Several improvements are proposed to reduce the driving voltage and the excess losses. For example, a modified electrode structure can improve the beam shaping in the connecting guide and thus increase the transmission when the device is in the 'on' state.>
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Bélanger et al. (1988) studied this question.
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