Flexible and low-cost organic field-effect transistors (OFETs) are desired for a variety of organic electronics. In this paper, we describe step-edge vertical-channel OFETs (SVC-OFETs) having excellent device performance fabricated by nanoimprint lithography and a self-aligned process. SVC-OFETs can be used to fabricate a submicron channel by forming the channel region around the step edge. The carriers flow in the vertical direction in the short channel along the step-edge structure. Both n- and p-channel FETs are also realized by a solution process.
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Kudo et al. (2012) studied this question.
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