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We present a new procedure for extracting generalizedS‐parameters from the 3D time‐domain field analysis of microwave components that have ports with different and arbitrary reference impedances. The proposed approach has been implemented in the 3D TLM environment for transient circuit simulation. The accuracy of this method has been validated by comparing TLM simulation results with theoretical predictions. We then describe a general analog behavioral model (ABM) for two‐port networks with different port impedances, characterized by its generalizedS‐parameters. Such an ABM has been implemented in the PSPICEenvironment for transient circuit simulation. This model has been validated by comparing its time response with the original TLM field simulation. The described modeling approach can be used to build field‐based behavioral models for SPICE‐based circuit simulators.
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Du et al. (2007) studied this question.
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