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The kinetics of the low pressure CVD growth of from and have been studied for an indirect (remote) plasma process. Homogeneous (gas phase) and heterogeneous operating ranges were identified and within the heterogeneous (surface reaction dominated) range of operation the process was found to be very reproducible and consistent. The kinetic rate equation for the growth at 14W RF power input and 400 mtorr total pressure, on both and, Si substrates, was found to be where the give the molar flow rate of the constituents for the reaction.
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Iyer et al. (1988) studied this question.
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