GaAs/GaAs1−ySby strained-layer superlattices grown by molecular beam epitaxy

GaAs/GaAs1−ySby superlattices have been grown by molecular beam epitaxy and characterized by x-ray diffraction, transmission electron microscopy, and low-temperature photoluminescence. Transmission electron microscopy and x-ray results indicate that high quality superlattices may be grown for lattice mismatches up to 3.1%. These structures exhibit luminescence at wavelengths as long as 1.7 μm, making them candidates for infrared device applications.