GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by a breakdown of the polarization selection rules and by the appearance of a new mode at 716 cm^-1, i.e., in the frequency gap between the transverse optical and longitudinal optical bulk phonons. We present a Raman line-shape analysis based on the effective dielectric function of a composite that brings to light the Fr\"ohlich character of this mode.
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Tiginyanu et al. (2001) studied this question.
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