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June 7, 1999Applied Physics Letters

Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

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CYC. YoutseyMicroLink Devices (United States)LRLucia RomanoPaul Scherrer InstituteRMR. J. MolnarELI-HU Research and Development Non-Profit

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Youtsey et al. (1999) studied this question.

synapsesocial.com/papers/6a8fb09130c3f38102899bdbhttps://doi.org/10.1063/1.124153
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