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January 12, 1998Applied Physics Letters

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

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Authors

Shuji Nakamura
Shuji NakamuraNEC (Japan)MSMasayuki SenohNichia Corporation (Japan)SNShin‐ichi NagahamaKyoto University

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Nakamura et al. (1998) studied this question.

synapsesocial.com/papers/6a87f1d9b27ac02ef9a52db0https://doi.org/10.1063/1.120688
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