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March 1, 1990Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy

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Authors

ZSZlatko SitarNorth Carolina State UniversityMPMichael J. PaisleyProvidence CollegeBYBangbo YanWestern Kentucky University

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Sitar et al. (1990) studied this question.

synapsesocial.com/papers/6a82a39f979d337bd4440a6chttps://doi.org/10.1116/1.585061
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