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July 1, 1997Japanese Journal of Applied Physics

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

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Authors

AUAkira UsuiUniversity of KochiHSHaruo SunakawaNEC (Japan)ASAkira SakaiUniversity of Hyogo

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Usui et al. (1997) studied this question.

synapsesocial.com/papers/6a72937ff44fa9f079e001cchttps://doi.org/10.1143/jjap.36.l899
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