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December 1, 1997Journal of Applied Physics

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

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Authors

ETE. J. TarsaNational Renewable Energy LaboratoryBHB. HeyingNorthrop Grumman (United States)XWXuemei WuSouthwest Jiaotong University

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Tarsa et al. (1997) studied this question.

synapsesocial.com/papers/6a73241ba177409e79a0ba8fhttps://doi.org/10.1063/1.365575
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