Experimental study demonstrates intense violet emission in GaInN double heterostructure diodes grown by molecular beam epitaxy, indicating a viable method for solid-state optoelectronics.
High-quality GaN and Ga 1- x In x N ( x ≤0.2) have been grown by RF-plasma-assisted molecular beam epitaxy (RF-MBE) on the GaN/AlN/sapphire substrate grown by metalorganic vapor-phase epitaxy for the first time. GaN and GaInN showed intense near-band-edge photoluminescence (PL) at room temperature. A double hetero-structure (DH) of p -GaN:Mg/Ga 0.8 In 0.2 N/ n -GaN has been fabricated. The DH light emitting diode showed intense violet emission upon current injection at room temperature.
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Sakai et al. (1995) studied this question.
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