Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 10, 1996Electronics Letters

Blue and green electroluminescence from MBE grownGaN/InGaN heterostructures

View Full Paper
Ask AI
Bookmark
Share

Authors

HTH. TewsIBM (United States)RAR. AverbeckSiemens (Germany)AGA. GraberUniversity of Florida

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Tews et al. (1996) studied this question.

synapsesocial.com/papers/6a95ceb52e8e4ee7ea376bbbhttps://doi.org/10.1049/el:19961335
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Characteristics of light-emitting diodes based on GaN <i>p</i>-<i>n</i> junctions grown by plasma-assisted molecular beam epitaxy1996 · 60 citations
  2. 2InGaN-Based Multi-Quantum-Well-Structure Laser Diodes1996 · 2,503 citations
  3. 3Free and bound excitons in thin wurtzite GaN layers on sapphire1996 · 113 citations