Answers are grounded in this paper and cite their sources.
The influence of electron-electron scattering on mobility in GaAs is studied over the temperature range 80–300 K using the variation principle. The mobilities limited by both polar optic and ionized impurity scattering are reduced more significantly due to electron-electron scattering than those limited by deformation potential acoustic and by piezoelectric scattering. For a carrier concentration of 1016 cm−3, the overall mobility is reduced by about 10% at 80 K.
No takes yet. Share an insight, caveat, or question.
Dipankar Chattopadhyay (1982) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: