This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.
No takes yet. Share an insight, caveat, or question.
Wang et al. (1998) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: