Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement

This is the first report on the experimental results using the precise determination proposed in our previous papers. By means of this analysis, the concentrations and energy levels of dopants in a semiconductor can be uniquely determined using the temperature dependence n(T) of the majority-carrier concentration obtained experimentally from the Hall-effect measurement. In other words, the concentration and energy level of each dopant can be evaluated using the corresponding peak value and temperature of n(T)/k T. In nitrogen (N)-doped 4H-SiC, the concentration and energy level of the shallow donor are 6.45 ×1015 cm-3 and E C-0.0653 eV, respectively, and those of the deep donor are 3.04 ×1016 cm-3 and E C-0.124 eV, respectively, where E C is the bottom of the conduction band. The acceptor concentration is 6.14 ×1013 cm-3. These obtained values are found to be quite reliable.