High Temperature Operated Enhancement-Type β-SiC MOSFET

Enhancement-type β-SiC MOSFETs have been fabricated on a single crystalline β-SiC layer grown on a 3-inch Si(100) substrate by chemical vapor deposition. The MOSFETs fabricated by applying the reactive ion etching technique show reasonable I-V characteristics at room temperature. The saturation tendency of the drain currents has been observed at a drain voltage as high as 18 V. The MOSFETs operate even at 350°C.