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March 1, 1998Japanese Journal of Applied PhysicsOpen Access

Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE

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HOHiroshi OkamotoThe University of TokyoKOKunishige OeKyoto Institute of Technology

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Okamoto et al. (1998) studied this question.

synapsesocial.com/papers/6a9011d2ebb21526730d30cbhttps://doi.org/10.1143/jjap.37.1608
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  1. 1InAsSbBi alloys grown by organometallic vapor-phase epitaxy1994 · 38 citations
  2. 2Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. I. Crystal growth1980 · 87 citations
  3. 3New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth1996 · 68 citations
  4. 4Direct E0 energy gaps of bismuth-containing III–V alloys predicted using quantum dielectric theory1987 · 41 citations