New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth

New III–V compound semiconductors TlInGaP (thallium indium gallium phosphide) lattice-matched to InP are proposed for 0.9 µm to over 10 µm wavelength range laser diodes and their first successful growth is reported by gas-source molecular beam epitaxy. A type-I band lineup and a larger band discontinuity in the conduction band than in the valence band are expected for their heterostructures. They also have the potential to exhibit a temperature-independent band-gap energy (wavelength), which is promising for the fabrication of lasers that can be used in wavelength division multiplexing (WDM) optical fiber communication. Grown layers exhibit (2×4) surface reconstruction and have mirror-like surfaces. Phase separation is not observed in this material system by X-ray diffraction measurement.