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April 1, 1981Japanese Journal of Applied Physics

InSb1-xBix Films Grown by Molecular Beam Epitaxy

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Authors

KOKunishige OeKyoto Institute of TechnologySASeigo AndoUniversity of TsukubaKSKoichi SugiyamaToho University

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Oe et al. (1981) studied this question.

synapsesocial.com/papers/6a9011d2ebb21526730d30cdhttps://doi.org/10.1143/jjap.20.l303
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Also Consider

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  1. 1Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. I. Crystal growth1980 · 87 citations
  2. 2Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. II. Phase stability1980 · 34 citations
  3. 3RHEED Study of InSb Films Grown by Molecular Beam Epitaxy1980 · 68 citations
  4. 4Calculated elastic constants for stress problems associated with semiconductor devices1973 · 1,203 citations