New carrier lifetime measurement method for fully depleted SOI MOSFET's

A carrier lifetime measurement method for fully depleted SOI MOSFETs is proposed. Generation and recombination lifetimes are evaluated from transient drain current characteristics after applying a step voltage to the substrate and after the optical generation of electron-hole pairs, respectively. Using the drain current characteristics, transient behavior of inversion charge density, accumulation charge density, and electric field in the SOI layer are analyzed to obtain the carrier lifetime. The validity of the method is demonstrated by experiments using SIMOX SOI MOSFETs.>