Autodoping Effects in Silicon Epitaxy

This paper reviews some of the recent autodoping developments which have contributed to a quantitative understanding of this phenomenon. Special emphasis is placed on buried layer studies that are pertinent to the fabrication of integrated circuits. The paper also presents new data concerning the origin of autodoping, flow effects, autodoping differences between silane and depositions, and the effect of vapor etch on autodoping. An attempt is made to provide a theoretical framework within which these and other effects can be interpreted.