Sulfur-Doped Silicon Photodiode by Ion Implantation and Femtosecond Laser Annealing

Femtosecond (fs) laser annealing has been applied to improve the crystalline quality and absorptance below bandgap of ion implanted silicon (Si) with sulfur (S). The doping concentration of S is up to 1020atoms/cm3, which is at least four orders of magnitude higher than the solid solubility of S in crystalline Si. According to the Raman spectra, after fs laser irradiation with appropriate laser energy, the crystal quality is evidently better than primary ion implanted sample. Moreover, the optical absorption coefficient at wavelengths of 1100~2400 nm is up to 1.54 × 104cm-1, which is much larger than the contribution of free carriers. Excessive laser energy will induce serious ablation effect and cause the removing of doping layer. We consider that the high absorption is a combination of sub-bandgap transition of S-related localized states, free carrier absorption, ion implantation induced defect absorption and fs laser irradiation induced defect absorption. In the end, a photo-response of 8.4 mA/W is obtained for the photodiode for 1310 nm detection light.