A simple method using a two‐film optical model has been developed for ellipsometric characterization of single‐crystal silicon damaged by low energy ion bombardment. The model consists of a planar semi‐infinite crystalline silicon substrate covered by a damaged silicon layer, covered by an amorphous film. Values for the complex refractive indexes of each layer are obtained from the literature. The thicknesses, and , of the damage layer and the film, respectively, are calculated from the experimental ellipsometric parameters Ψ and Δ. The accuracy of the method has been confirmed by Rutherford backscattering spectrometry. The present method is compared to two similar, previously reported ellipsometric methods.
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Buckner et al. (1986) studied this question.