Answers are grounded in this paper and cite their sources.
A Monte Carlo simulation code has been developed to study the effect of phonon perturbations in hot-electron transport in semiconductors. The modifications of carrier drift velocity and mean energy induced by the perturbed acoustic-phonon distribution are studied at low temperatures in p-Ge. Under appropriate conditions, current saturation is obtained as a result of the steady-state phonon perturbation. The Monte Carlo analysis has been complemented and compared with an analytical approach based on a heated and displaced Maxwellian distribution for the electron gas.
No takes yet. Share an insight, caveat, or question.
Bordone et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: