The photoluminescence emission of porous silicon was regularly measured while immersed in dilute metal ion solutions of Cu, Ag, and Au. The emission spectra show progressive quenching that advances from the blue edge towards the red edge of the emission band, causing a continuous shift in the band center and a narrowing of its width. Auger electron spectroscopy data show that the penetration of the metal adsorbate into the porous layer correlates with the degree of quenching of the photoluminescence. These results are interpreted as a progression of the quenching of the photoluminescence inward from the surface of the sample toward the bulk.
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Andsager et al. (1994) studied this question.
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