We have studied photoluminescence (PL) from porous Si depending on the hydrogen termination on Si nanocrystallites. The hydrogen concentration in the samples was controlled by photochemical etching after the electrochemical anodization. The PL spectra, the PL excitation spectra and the picosecond PL decay rate were sensitive to the photochemical etching process. Spectroscopic analysis suggests that the photocarriers are generated in the inside of the Si crystallites and the radiative recombination occurs at the near-surface region of the Si crystallites.
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Kanemitsu et al. (1993) studied this question.
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