Answers are grounded in this paper and cite their sources.
For semiconductors showing band-gap impact ionization the density of electron-hole pairs can become high enough to lower the electron mobility significantly. It is shown that the observed drop in electron drift velocity in both InAs and InSb can be plausibly explained by the onset of such strong electron-hole scattering. The role of self-pinching as it affects the electron-hole scattering is considered in detail.
No takes yet. Share an insight, caveat, or question.
Steele et al. (1963) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: