Lateral interface mixing in GaAs quantum well wire arrays

GaAs quantum well wires with an (AlGaAs)1/2(GaAs)1/2 fractional-layer superlattice(FLS) are fabricated on slightly misoriented (001)GaAs substrates by metalorganic chemical vapor deposition. Transmission electron microscope images show clear contrast for the GaAs quantum wire array, although the lateral heterojunction interface is a little diffusive. Photoluminescences are measured for a quantum well wire array having both FLS and GaAs layers as the well region. From a comparison of measured and calculated photoluminescence energies, the thickness of the lateral interface mixing layer is estimated to be 1–2 nm.