Structure and Energy Levels of the Glide 60° Partial in Silicon

Deformation induced edge dislocations in Si are known to be dissociated into pairs of 60° partials and act as electrical recombination centres. The structure of this partial is investigated using isotropic elasticity theory and a simple core reconstruction is suggested. The effect of this reconstruction is to eliminate all dangling bonds leaving only an empty band in the upper part of the band gap.